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Power MOSFET. IRF9240-SMD Datasheet |
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IRF9240
IRF9240–SMD
MECHANICAL DATA
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
P–CHANNEL
POWER MOSFET
D
12
Pin 1 – Gate
3
(case)
3.84 (0.151)
4.09 (0.161)
TO–3 Package
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Pin 3 – Drain
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
3 .6 0 (0 .1 4 2 )
M ax.
13
2
G
S
FEATURES
• P–CHANNEL POWER MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• AVAILABLE IN TO-3 (TO-204AA) AND
CERAMIC SURFACE MOUNT PACKAGES
Pin 1 – Gate
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD1
Pin 2 – Source
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pin 3 – Drain
TO–3
— TO–3 (TO–204AA) Metal Package
TO–220 SM — TO–220 Ceramic Surface Mount Package
Note: IRFNxxxx also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
VDGR
VGS
ID
IDM
PD
Drain – Source Voltage
WDrain – Gate Voltage (RGS = 20K )
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
@ Tcase = 25°C
@ Tcase = 100°C
Max. Power Dissipation
Linear Derating Factor
@ Tcase = 25°C
(TO 3 package only)
–200V
–200V
±20V
–11A
–7.0A
–44A
125W
1W / °C
ILM Inductive Current , Clamped
Tj
Operating Junction and
(TO 3 package only)
Tstg Storage Temperature Range
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
–44A
–55 to 150°C
Prelim. 7/00
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IRF9240
IRF9240–SMD
ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS
VGS(TH)
Characteristic
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Test Conditions
mVGS = 0V , ID = –250 A
mVDS = VGS , ID = –250 A
Gate – Source Leakage Current (forward)
IGSS Gate – Source Leakage Current (reverse)
VGS = –20V
VGS = 20V
VDS = Max. Rating , VGS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = 0.8 x Max. Rating
VGS = 0V , Tcase = 125°C
ID(ON) On State Drain Current 1
VDS > ID(ON) x RDS(ON) Max
VGS = –10V
RDS(ON) Static Drain – Source On-State Resistance
VGS = –10V , ID = –6A
gfs Forward Transconductance 1
VDS > ID(ON) x RDS(ON) Max
ID = –6A
Ciss Input capacitance
VGS = 0V
Coss Output capacitance
VDS = –25V
Crss Reverse transfer capacitance
f = 1MHz
Qg Total Gate Charge
VGS = –15V
Qgs Gate – Source Charge
ID = –22A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.8 x Max. Rating
td(on)
tr
td(off)
tf
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 x BVDSS
ID = –6A
ZO = 4.7W
LD Internal Drain Inductance
LS Internal Source Inductance
THERMAL CHARACTERISTICS
Characteristic
RqJC Junction to Case
RqCS Case to Sink
RqJA Junction to Ambient
TL Max. Lead Temperature 0.063 ” from case for 10 sec.
(TO-3 package only)
(TO-3 package only)
(TO-3 package only)
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current1 (Body Diode)
VSD Diode Forward Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V , IS = – 11A
Tcase = 25°C
mIF = –11A , dlF / dt = 100A/ s
Tj = 150°C
mIF = –11A , dlF / dt = 100A/ s
Tj = 150°C
1) Pulse Test: Pulse Width < 300mS , Duty Cycle £ 2%
2) Repetitive Rating: Pulse Width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min.
–200
–2
–11
4
Min.
Min.
Typ.
Max.
–4
–100
100
–250
Unit
V
V
nA
nA
mA
–1000 mA
A
0.35 0.5 W
6S
1100
375
150
70
55
15
20
10
12
8
5.0
12.5
1300
450
250
90
30
15
18
12
pF
nC
ns
nH
nH
Typ.
0.1
300
Max. Unit
1.0 °C/W
°C/W
30 °C/W
°C
Typ.
Max.
–11
–44
Unit
A
–4.6 V
270 ns
2.0 mC
Prelim. 7/00
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