IRF9630, RF1S9630SM
Data Sheet July 1999 File Number
2224.3
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
These are P-...
IRF9630, RF1S9630SM
Data Sheet July 1999 File Number
2224.3
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17512.
Features
6.5A, 200V rDS(ON) = 0.800Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF9630 RF1S9630SM PACKAGE TO-220AB TO-263AB BRAND IRF9630 RF1S9630
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
4-27
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corpora...