IRF9952

PD - 9.1561A PRELIMINARY l l l l l l IRF9952 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5 P -C H A N N E L M O S F E T RDS(on) 0.10Ω 0.25 Ω T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 ± 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Uni...