Power MOSFET
PD - 91559B
IRF9956
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Very...
Description
PD - 91559B
IRF9956
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Very Low Gate Charge and
Switching Losses l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
VDSS = 30V RDS(on) = 0.10Ω
Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA = 25°C TA = 70°C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Maximum Power Dissipation
TA = 25°C TA = 70°C
PD
Single Pulse Avalanche En...
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