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IRF9Z24N

International Rectifier

Power MOSFET


Description
PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...



International Rectifier

IRF9Z24N

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