PD - 9.912A
IRF9Z24S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l l
D
VDSS = -60V RDS(on) = 0.28Ω
G
ID = -11A
S
Third Generation HEXFETs from International Rectifier utilize advanced proc...
