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IRFB41N15D Dataheets PDF



Part Number IRFB41N15D
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB41N15D DatasheetIRFB41N15D Datasheet (PDF)

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET RDS(on) max ID 0.045: 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings .

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Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET RDS(on) max ID 0.045: 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM c Pulsed Drain Current PD @TA = 25°C Power Dissipation, D2Pak PD @TC = 25°C Power Dissipation, TO-220 PD @TC = 25°C Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak VGS dv/dt TJ TSTG Gate-to-Source Voltage e Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case RθJC Junction-to-Case, Fullpak Rθcs h Case-to-Sink, Flat, Greased Surface RθJA h Junction-to-Ambient, TO-220 RθJA i Junction-to-Ambient, D2Pak RθJA Junction-to-Ambient, Fullpak Notes  through ‡ are on page 12 www.irf.com Max. 41 29 164 3.1 200 48 1.3 0.32 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 1.1(10) Typ. ––– ––– 0.50 ––– ––– ––– Max. 0.75 3.14 ––– 62 40 65 Units A W W/°C V V/ns °C N•m (lbf•in) Units °C/W 1 07/16/03 IRFB/IRFIB/IRFS/IRFSL41N15D Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Min. Drain-to-Source Breakdown Voltage 150 Breakdown Voltage Temp. Coefficient ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 3.0 Drain-to-Source Leakage Current ––– ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA f 0.045 Ω VGS = 10V, ID = 25A 5.5 V VDS = VGS, ID = 250µA 25 µA VDS = 150V, VGS = 0V 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 nA VGS = 30V -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance Avalanche Characteristics Min. 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 72 21 35 16 63 25 14 2520 510 110 3090 230 250 Max. Units Conditions ––– S VDS = 50V, ID = 25A 110 ID = 25A 31 nC VDS = 120V 52 f VGS = 10V ––– VDD = 75V ––– ID = 25A ––– ns RG = 2.5Ω ––– f VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– g VGS = 0V, VDS = 0V to 120V Parameter EAS d Single Pulse Avalanche Energy IAR Ù Avalanche Current EAR ™ Repetitive Avalanche Energy Diode Characteristics Typ. ––– ––– ––– Max. 470 25 20 Units mJ A mJ Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 41 MOSFET symbol D (Body Diode) A showing the ISM Pulsed Source Current Ù (Body Diode) VSD Diode Forward Voltage ––– ––– 164 ––– ––– 1.3 integral reverse G p-n junction diode. S f V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– 170 260 ns TJ = 25°C, IF = 25A f ––– 1.3 1.9 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ID, Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V IRFB/IRFIB/IRFS/IRFSL41N15D 1000 100 VGS TOP 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V I D, Drain-to-Source Current (A) 10 6.0V 20µs PULSE WIDTH TJ= 25 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 6.0V 20µs PULSE WIDTH TJ= 175 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 100 TJ = 175° C TJ = 25° C 10 V DS= 25V 20µs PULSE WIDTH 1 6 7 8 9 10 11 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain.


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