Document
Applications l High frequency DC-DC converters
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
VDSS
150V
PD - 93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
RDS(on) max
ID
0.045:
41A
TO-220AB TO-220 FullPak D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
c Pulsed Drain Current
PD @TA = 25°C Power Dissipation, D2Pak
PD @TC = 25°C Power Dissipation, TO-220
PD @TC = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
VGS
dv/dt TJ TSTG
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJC
Junction-to-Case, Fullpak
Rθcs
h Case-to-Sink, Flat, Greased Surface
RθJA
h Junction-to-Ambient, TO-220
RθJA
i Junction-to-Ambient, D2Pak
RθJA
Junction-to-Ambient, Fullpak
Notes through are on page 12 www.irf.com
Max. 41 29 164 3.1 200 48
1.3 0.32 ± 30
2.7 -55 to + 175
300 (1.6mm from case ) 1.1(10)
Typ. ––– ––– 0.50 ––– ––– –––
Max. 0.75 3.14 ––– 62 40 65
Units A W
W/°C V
V/ns °C N•m (lbf•in) Units °C/W
1
07/16/03
IRFB/IRFIB/IRFS/IRFSL41N15D
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS
IGSS
Parameter
Min.
Drain-to-Source Breakdown Voltage 150
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
3.0
Drain-to-Source Leakage Current
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. ––– 0.17 ––– ––– ––– ––– ––– –––
Max. Units Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
f 0.045 Ω VGS = 10V, ID = 25A
5.5
V VDS = VGS, ID = 250µA
25 µA VDS = 150V, VGS = 0V
250
VDS = 120V, VGS = 0V, TJ = 150°C
100 nA VGS = 30V
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Avalanche Characteristics
Min. 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 72 21 35 16 63 25 14 2520 510 110 3090 230 250
Max. Units Conditions
––– S VDS = 50V, ID = 25A
110
ID = 25A
31 nC VDS = 120V
52
f VGS = 10V
–––
VDD = 75V
–––
ID = 25A
––– ns RG = 2.5Ω
–––
f VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
––– pF ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
g VGS = 0V, VDS = 0V to 120V
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
à Avalanche Current
EAR
Repetitive Avalanche Energy
Diode Characteristics
Typ. ––– ––– –––
Max. 470 25 20
Units mJ A mJ
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 41
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
––– ––– 164 ––– ––– 1.3
integral reverse
G
p-n junction diode.
S
f V TJ = 25°C, IS = 25A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– 170 260 ns TJ = 25°C, IF = 25A
f ––– 1.3 1.9 µC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
ID, Drain-to-Source Current (A)
1000 100
VGS TOP 15V
10V
9.0V 8.0V 7.5V 7.0V
6.5V BOTTOM 6.0V
IRFB/IRFIB/IRFS/IRFSL41N15D
1000 100
VGS TOP 15V
10V 9.0V 8.0V 7.5V
7.0V 6.5V BOTTOM 6.0V
I D, Drain-to-Source Current (A)
10
6.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
6.0V
20µs PULSE WIDTH
TJ= 175 °C 1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
100 TJ = 175° C
TJ = 25° C 10
V DS= 25V
20µs PULSE WIDTH 1
6
7
8
9
10
11
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics www.irf.com
RDS(on) , Drain.