Document
PD- 91832
IRFB9N30A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 300V
G S
RDS(on) = 0.45Ω ID = 9.3A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.3 5.9 37 96 0.77 ± 30 160 9.3 9.6 4.6 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
1.3 ––– 62
Units
°C/W
www.irf.com
1
10/7/98
IRFB9N30A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 300 ––– ––– 2.0 6.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 25 35 29 4.5 7.5 920 160 8.7 1200 52 102
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.45 Ω VGS = 10V, ID = 5.6A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 5.6A 25 VDS = 300V, VGS = 0V µA 250 VDS = 240V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V 33 ID = 9.3A 6.9 nC VDS = 240V 12 VGS = 10V, See Fig. 6 and 13 ––– VDD = 150V ––– ID = 9.3A ns ––– RG = 12Ω ––– RD = 16Ω,See Fig. 10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– V.