Power MOSFET
PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-...
Description
PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 600V RDS(on) = 4.4Ω
G
ID = 2.2A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC20L) is available for low-profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.2 ...
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