PD- 91890B
SMPS MOSFET
IRFBC30AS/L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptabl...
PD- 91890B
SMPS MOSFET
IRFBC30AS/L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching
l
VDSS
600V
Rds(on) max
2.2 Ω
ID
3.6A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001)
l
D 2 Pak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
3.6 2.3 14 74 0.69 ± 30 7.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Typical SMPS Topology:
l
Single
transistor Flyback
Notes
through
are on page 10
www.irf.com
1
5/4/00
IRFBC30AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge...