IRFBC30L

PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l VDSS 600V Rds(on) max 2.2 Ω ID 3.6A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001) l D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 3.6 2.3 14 74 0.69 ± 30 7.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topology: l Single transistor Flyback Notes  through … are on page 10 www.irf.com 1 5/4/00 IRFBC30AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge...