N-Channel Power MOSFET
®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < ...
Description
®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 6.2 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 600 600 ± 20 2 3.9 25 125 1.0 3 -65 to 150 150
(1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V A A A W W/ C V/ ns
o o o
C C
() Pulse width limited by safe operating area
August 1998
1/8
IRFBC40
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk Tl
Thermal Resistance Junction-case Max Thermal Resistance Jun...
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