IRFBC40

IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. Features 6.2A, 600V rDS(ON) = 1.200Ω Single Pulse Avalanche Energy Rated Simple Drive Requirements Ease of Paralleling Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-263 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFBC40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFBC40 600 600 6.2 3.9 25 ±20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . ...