Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Ch...
Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426.
January 1998
Features
6.2A and 5.4A, 600V rDS(ON) = 1.2Ω and 1.6Ω Repetitive Avalanche Energy Rated Simple Drive Requirements Ease of Paralleling Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFBC40 IRFBC42 PACKAGE TO-220AB TO-220AB BRAND IRFBC40 IRFBC42
G
Symbol
D
NOTE: When ordering, include the entire part number.
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1997
File Number
2157.2
5-1
IRFBC40, IRFBC42
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFBC40 Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . ...