IRFD214

HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1271 IRFD214 VDSS = 250V RDS(on) = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt. HD-1 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.45 0.29 3.6 1.0 0.0083 ±20 57 0.45 0.10 4.8 -55 to + 150 300 (1.6mm from case) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance RθJA Parameter Junction-to-Ambient Min. — Typ. — Max. Units 120 °C/W Revision 0 IRFD214 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdow...