IRFD9110

IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541. Features 0.7A, 100V rDS(ON) = 1.200Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE ©2002 Fairchild Semiconductor Corporation IRFD9110 Rev. B IRFD9110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD9110 -100 -100 -0.7 -3.0 ±20 1.0 0.008 190 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...