IRFD9120

IRFD9120 Data Sheet July 1999 File Number 2285.3 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17501. Features 1.0A, 100V rDS(ON) = 0.6Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9120 PACKAGE HEXDIP BRAND G IRFD9120 S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-45 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD9120 -100 -100 -1.0 -8.0 ±20 1.0 0.008 370 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....