Power MOSFET. IRFF9120 Datasheet

IRFF9120 MOSFET. Datasheet pdf. Equivalent


Intersil Corporation IRFF9120
Data Sheet
IRFF9120
June 1999 File Number 2287.2
4A, 100V, 0.60 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power
field effect transistor is designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9120
TO-205AF
IRFF9120
NOTE: When ordering, use the entire part number.
Features
• 4A, 100V
• rDS(ON) = 0.60
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


IRFF9120 Datasheet
Recommendation IRFF9120 Datasheet
Part IRFF9120
Description P-Channel Power MOSFET
Feature IRFF9120; IRFF9120 Data Sheet June 1999 File Number 2287.2 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET This P-.
Manufacture Intersil Corporation
Datasheet
Download IRFF9120 Datasheet




Intersil Corporation IRFF9120
IRFF9120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFF9120
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation, (Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-4
-16
±20
20
0.16
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
370
-55 to 150
mJ
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Drain to Source On-State Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
IGSS
rDS(ON)
gfs
tD(ON)
tr
tD(OFF)
tf
QG(TOT)
QGS
QGD
CISS
COSS
CRSS
LD
LS
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = Max Rating, VGS = 0V
VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = -20V
VGS = 20V
VGS = 10V, ID = -2A
VDS > ID(ON) x rDS(ON) Max, ID = 2A
VDD 0.5BVDSS, ID = 4A, RG = 9.1
(Figure 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VGS = 10V, ID = 4A, VDS = 0.8 Max BVDSS
(See Figure 18 for Test Circuit) Gate Charge
is Essentially Independent of Operating
Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz,
See Figure 10
Measured from the
Drain Lead, 5.0mm
(0.2in) From Header
to Center of Die
Measured from the
Source Lead, 5.0mm
(0.2in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
G
MIN
-100
-2.0
-
-
-4
-
-
-
1.25
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
- -4.0 V
- -250 µA
- -1000 µA
--A
- -100 nA
- 100 nA
0.5 0.6
2- S
25 50
ns
50 100 ns
50 100 ns
50 100 ns
16 22 nC
9-
7-
300 -
200 -
50 -
5.0 -
nC
nC
pF
pF
pF
nH
15 - nH
Junction to Case
Junction to Ambient
4-95
RθJC
RθJA
Typical Socket Mount
S
- - 6.25 oC/W
- - 175 oC/W



Intersil Corporation IRFF9120
IRFF9120
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source Current
Pulse Source Current (Note 3)
ISD Modified MOSFET
ISM
Symbol Showing the
Integral Reverse
P-N Junction
Rectifier
G
D
MIN TYP MAX UNITS
- - -4 A
- - -16 A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = -4A, VGS = 0V
- - -1.5
Diode Reverse Recovery Time
trr TJ = 150oC, ISD = 4A, dISD/dt = 100A/µs
- 230 -
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = -4A, dISD/dt = 100A/µs
-
1.3
-
NOTES:
2. Pulse test: Pulse width 300µs, Duty Cycle 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. VDD = 25V, starting TJ = 250oC, L = 34.7mH, RG = 25Ω, peak IAS = 4.0A. See Figures 15 and 16)
Typical Performance Curves
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-5
-4
-3
-2
-1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-96







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