IRFF9220

IRFF9220 Data Sheet July 1998 File Number 2288.2 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly develpomental type TA17502. Features -2.5A, -200V rDS(ON) = 1.5Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9220 PACKAGE TO-205AF BRAND IRFF9220 G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-107 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9220 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF9220 -200 -200 -2.5 -10 ±20 20 0.16 290 -55 to 150 300 UNITS V V A A V W W/oC mJ oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...