PD - 9.1374B
IRFI3205
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.008Ω ID = 64A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...
