Power MOSFET
PD - 9.1361A
PRELIMINARY
IRFI540N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High ...
Description
PD - 9.1361A
PRELIMINARY
IRFI540N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.052Ω ID = 20A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and...
Similar Datasheet