IRFW610B / IRFI610B
November 2001
IRFW610B / IRFI610B
200V N-Channel MOSFET
General Description
These N-Channel enhanc...
IRFW610B / IRFI610B
November 2001
IRFW610B / IRFI610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
!
●
◀
▲
● ●
G
S
D2-PAK
IRFW Series
G D S
I2-PAK
IRFI Series
G!
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFW610B / IRFI610B 200 3.3 2.1 10 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
40 3.3 3.8 5.5 3.13 38 0.31 -55 to +150 300
TJ, Tstg TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating...