IRFW710B / IRFI710B
November 2001
IRFW710B / IRFI710B
400V N-Channel MOSFET
General Description
These N-Channel enhanc...
IRFW710B / IRFI710B
November 2001
IRFW710B / IRFI710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features
2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
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▲
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G! G S
D2-PAK
IRFW Series
G D S
I2-PAK
IRFI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFW710B / IRFI710B 400 2.0 1.3 6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
100 2.0 3.6 5.5 3.13 36 0.29 -55 to +150 300
TJ, Tstg TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead te...