Document
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient
PD - 9.1489B
IRFIZ34N
HEXFET® Power MOSFET D VDSS = 55V
RDS(on) = 0.04Ω
ID = 21A
S
TO-220 FULLPAK
Max. 21 15 100 37 0.24 ± 20 110 16 3.7 5.0
-55 to + 175
300 (1.6mm from case ) 10 lbfin (1.1Nm)
Typ.
Max. 4.1 65
Units
A
W W/°C
V mJ A mJ V/ns
°C
Units °C/W
7/9/04
IRFIZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance C Drain to Sink Capacitance
Min. Typ. Max. 55 0.052 0.04 2.0 4.0 6.5 25 250 100 -100 34 6.8 14 7.0 49 31 40
4.5
7.5
700 240 100 12
Units V
V/°C Ω V S µA nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 16A
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter IS Continuous Source Current
(Body Diode) ISM Pulsed Source Current
(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
21
A showing the
integral reverse
G
100
p-n junction diode.
S
1.6 V TJ = 25°C, IS = 11A, VGS = 0V
57 86 ns TJ = 25°C, IF = 16A 130 200 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, =60Hz Uses IRFZ34N data and test conditions
1000 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFIZ34N
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1 0.1
4.5V
20µs PULSE WIDTH
TTCJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
20µs PULSE WIDTH
1
TTCJ= 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C TJ = 175°C
10
VDS = 25V
20µs PULSE WIDTH
1 4
5
6
7
8
9 10A
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance (Normalized)
2.4 ID = 26A
2.0
1.6
1.