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IRFIZ34N Dataheets PDF



Part Number IRFIZ34N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFIZ34N DatasheetIRFIZ34N Datasheet (PDF)

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and rel.

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l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient PD - 9.1489B IRFIZ34N HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.04Ω ID = 21A S TO-220 FULLPAK Max. 21 15 100 37 0.24 ± 20 110 16 3.7 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– Max. 4.1 65 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 7/9/04 IRFIZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance C Drain to Sink Capacitance Min. Typ. Max. 55 ––– ––– ––– 0.052 ––– ––– ––– 0.04 2.0 ––– 4.0 6.5 ––– ––– ––– ––– 25 ––– ––– 250 ––– ––– 100 ––– ––– -100 ––– ––– 34 ––– ––– 6.8 ––– ––– 14 ––– 7.0 ––– ––– 49 ––– ––– 31 ––– ––– 40 ––– ––– 4.5 ––– ––– 7.5 ––– ––– 700 ––– ––– 240 ––– ––– 100 ––– ––– 12 ––– Units V V/°C Ω V S µA nA nC ns nH pF Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA† VGS = 10V, ID = 11A „ VDS = VGS, ID = 250µA VDS = 25V, ID = 16A† VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 16A VDS = 44V VGS = 10V, See Fig. 6 and 13 „† VDD = 28V ID = 16A RG = 18Ω RD = 1.8Ω, See Fig. 10 „† Between lead, D 6mm (0.25in.) from package G and center of die contact S VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5† ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) † VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge ton Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 21 A showing the integral reverse G ––– ––– 100 p-n junction diode. S ––– ––– 1.6 V TJ = 25°C, IS = 11A, VGS = 0V „ ––– 57 86 ns TJ = 25°C, IF = 16A ––– 130 200 nC di/dt = 100A/µs „† Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12) ƒ ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … t=60s, ƒ=60Hz † Uses IRFZ34N data and test conditions 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V IRFIZ34N ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 0.1 4.5V 20µs PULSE WIDTH TTCJ = 25°C A 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 4.5V 20µs PULSE WIDTH 1 TTCJ= 175°C A 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 100 TJ = 25°C TJ = 175°C 10 VDS = 25V 20µs PULSE WIDTH 1 4 5 6 7 8 9 10A VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 2.4 ID = 26A 2.0 1.6 1.


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