XN04602

Composite Transistors XN04602 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification ■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half 3 2 1 (0.65) 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 0.30+0.10 –0.05 ■ Basic Part Number 2SD0602A + 2SB0710A 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 5 0.5 1 −60 −50 −5 − 0.5 −1 300 150 −55 to +150 Unit V V V A A V Tr2 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.1 1.1+0.3 –0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 4A Internal Connection 4 5 6 Tr1 V V A A mW °C °C 3 2 1 0.4±0.2 5˚ Publication date: December 2003 SJJ00261BED 1 XN04602 ■ Electrical Characteristics Ta = 25°C ± 3°C Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base vol...