XN05601

Composite Transistors XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 1.1–0.1 q 2SB709A+2SD601A 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –7 –100 –200 60 50 7 100 200 300 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 4N Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.2 s Basic Part Number of Element +0.1 1.45±0.1 s Features +0.1 +0.1 1 Composite Transistors XN5601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IB = 0 V...