XN09D57

Composite Transistors XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) For DC-DC converter ■ Features Two elements incorporated into one package (Tr + SBD) Reduction of the mounting area and assembly cost by one half Low collector-emitter saturation voltage VCE(sat) 0.50+0.10 –0.05 0.30+0.10 –0.05 6 5 4 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 3 ■ Basic Part Number XN9D57 + MA3XD11 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Display at No.1 lead 10° 1.1+0.2 –0.1 Tr Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM PT Tj Tstg −15 −15 −5 −2.5 −10 20 25 1 2 600 125 −55 to +125 V V V A A V V A A 1 2 1: Emitter 2: Base 3: Anode 0 to 0.1 Parameter Symbol Rating Unit 4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package Marking Symbol: EW Internal Connection 6 5 4 SBD Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current Overall Total power dissipation * Junction temperature Storage temperature mW °C °C Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm ■ Electrical Characteristics Ta = 25°C ± 3°C Tr Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff curre...