XN0A311

Composite Transistors XN0A311 (XN1A311) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For switching ■ Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number UNR2211 (UN2211) + UNR2111 (UN2111) 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 300 150 −55 to +150 Unit V V mA V V mA mW °C °C 1: Collector (Tr1) Base (Tr2) 2: Collector (Tr2) EIAJ: SC-74A Marking Symbol: FN Internal Connection 3 4 5 Tr2 0 to 0.1 3: Emitter (Tr2) 4: Base (Tr1) 5: Emitter (Tr1) Mini5-G1 Package 1.1+0.3 –0.1 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJJ00234CED 0.4±0.2 5˚ 1 XN0A311 ■ Electrical Characteristics Ta = 25°C ± 3°C Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cut...