Composite Transistors
XN1504
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency outpu...
Composite
Transistors
XN1504
Silicon
NPN epitaxial planer
transistor
Unit: mm
For amplification of low frequency output
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Emitter-coupled
transistors) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1
q
2SD1938 × 2 elements
0.8
s Basic Part Number of Element
+0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 50 20 25 300 500 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin)
Marking Symbol: 5S Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON Resistance
*1 *2
(Ta=25˚C)
Symbol VCEO ICBO IEBO hFE hFE (small/large)*1 VCE(sat) VBE fT Cob Ron*2
1kΩ IB=1mA f=1kHz V=0.3V
Conditions IC = 1mA...