XN1D873

Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 300 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Source (Tr2) 0 to 0.1 2SK1103 × 2 elements 0.1 to 0.3 4 : Drain 5 : Source (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: OC Internal Connection 5 4 3 2 FET 1 1 FET 2 s Electrical Characteristics Parameter Drain current Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain ON resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = –10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = –30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 1.8 –1.5 2.5 300 7 1.5 1.5 min –50 0.2 6.0 –10 –3.5 typ max Unit V mA nA V mS Ω pF pF pF +0.1 Two elements incorporated into one package. (Drain-coup...