Document
Composite Transistors
XN2210
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1
q
UN1210 × 2 elements
0.8
s Basic Part Number of Element
+0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Emitter (Tr2)
0 to 0.1
0.1 to 0.3
4 : Base 5 : Emitter (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin)
Marking Symbol: 9Q Internal Connection
1 2 3 4 Tr1 5
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 150 47 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz kΩ min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA
Ratio between 2 elements
+0.1
1.45±0.1
s
Features
1
Composite Transistors
PT — Ta
500
XN2210
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
60
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C
Forward current transfer ratio hFE
IB=1.0mA 0.9mA 0.8mA
Ta=25˚C
350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C
Collector current IC (mA)
40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA
30
0.3mA
20
10
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC
(mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
.