Document
Composite Transistors
XN4111
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0.65±0.15
2.8 –0.3
+0.2 +0.25
1.5 –0.05 6
0.65±0.15 1
0.3 –0.05
0.5 –0.05
0.95
2.9 –0.05
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
s Basic Part Number of Element
q
1.1–0.1
0.4±0.2
s Absolute Maximum Ratings
Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 9U Internal Connection
6 5 4 Tr1 1 2 3
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 0.8 80 10 1.0 +30% 1.2 –4.9 – 0.2 35 – 0.25 V V V MHz kΩ min –50 –50 – 0.1 – 0.5 – 0.5 typ max Unit V V µA µA mA
0 to 0.05
UN1111 × 2 elements
0.1 to 0.3
0.8
0.16–0.06
+0.2
+0.1
1.45±0.1
s Features
+0.1
+0.1
1
Composite Transistors
PT — Ta
500
XN4111
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–160 –140 IB=–1.0mA Ta=25˚C –100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE — IC
160 VCE= –10V Ta=75˚C
–30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C
Collector current IC (mA)
–0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA
Forward current transfer ratio hFE
25˚C 120 –25˚C 80
25˚C
40
–1
–3
–10
–30
–100
0 –1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30
VIN — IO
VO= –0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
–1000 –300 –100 –30 –10 –3
–10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3
3
2
1
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current .