XN4608

Composite Transistors XN4608 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) 2.8 –0.3 0.65±0.15 6 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 1.9±0.1 0.95 s Features q q 2.9 –0.05 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1–0.1 +0.2 4 3 s Basic Part Number of Element q 2SD601A+2SB970 0.4±0.2 s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 60 50 7 100 200 –15 –10 –7 – 0.5 –1 300 150 –55 to +150 Unit V V V mA mA V V V A A mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5E Internal Connection 6 5 4 Tr1 1 2 3 Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Tr2 Overall Junction temperature Storage temperature 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.1 1.45±0.1 +0.1 +0.1 1 Composite Transistors XN4608 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA...