XN4683

Composite Transistors XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high-frequency amplification/For general amplification 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 s Features +0.2 5 2 0.95 4 3 1.1–0.1 q 2SC2404+2SB709A 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Emitter to base voltage Collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 30 20 3 15 –60 –50 –7 –100 –200 200 150 –55 to +150 Unit V V V mA V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: ER Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.2 s Basic Part Number of Element +0.1 1.45±0.1 +0.1 +0.1 1 Composite Transistors XN4683 (Ta=25˚C) Symbol VCBO VEBO hFE1 VBE Cre fT NF PG Conditions IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 6V, IC = –1mA VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA, f = 10.7MHz VC...