Document
Composite Transistors
XN5553
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of the low frequency
0.65±0.15
2.8 –0.3
+0.2 +0.25
1.5 –0.05 6
0.65±0.15 1
0.3 –0.05
0.5 –0.05
0.95
2.9 –0.05
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SD1149 × 2 elements
1.1–0.1
0.4±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 100 100 15 20 50 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2)
4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 4U Internal Connection
6 5 4 Tr1 1 2 3
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) NV fT Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VCE = 60V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT VCB = 10V, IE = –2mA, f = 200MHz 400 0.05 80 150 min 100 100 15 0.1 1.0 2000 0.2 V mV MHz typ max Unit V V V µA µA
0 to 0.05
0.1 to 0.3
0.8
0.16–0.06
+0.2
s Basic Part Number of Element
+0.1
1.45±0.1
s Features
+0.1
+0.1
1
Composite Transistors
PT — Ta
500
80 Ta=25˚C
XN5553
IC — VCE
60 VCE=10V 50 25˚C
IC — VBE
Total power dissipation PT (mW)
Collector current IC (mA)
60
300
IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA
Collector current IC (mA)
400
40
Ta=75˚C
–25˚C
40
30
200
20
20 10µA
100
10
0 0 40 80 120 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
hFE — IC
IC/IB=10
fT — IE
200
1800 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
VCB=10V Ta=25˚C
1500 Ta=75˚C 1200 25˚C –25˚C
Transition frequency fT (MHz)
30 100
30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C –25˚C
Forward current transfer ratio hFE
160
120
900
80
600
300
40
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 –0.1 –0.3
–1
–3
–10
–30
–100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob — VCB
6
NV — IC
f=1MHz IE=0 Ta=25˚C
100 VCE=10V GV=80dB Function=FLAT Ta=25˚C Rg=100kΩ 100
NV — VCE
Collector output capacitance Cob (pF)
5
Rg=100kΩ
Noise voltage NV (mV)
4
60 22kΩ 40 5kΩ
Noise voltage NV (mV)
80
80
60 22kΩ 40
3
2
5kΩ
1
20
20
0 1 2 3 5 10 20 30 50 100
0 0.01
0 0.03 0.1 0.3 1 1 2 3 5 10
IC=1mA GV=80dB Function=FLAT Ta=25˚C 20 30 50 100
Collector to base voltage VCB
(V)
Collector current IC (mA)
Collector to emitter voltage VCE (V)
2
.