XP1501

Composite Transistors XP1501 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For general amplification 0.65 s Features q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0.65 4 0.9± 0.1 q 2SD601A × 2 elements 0.7±0.1 s Basic Part Number of Element 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) Marking Symbol: 5R Internal Connection 1 2 3 4 Tr1 5 0 to 0.1 0.2±0.1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V,...