POWER MOS FET
XP152A12C0MR-G
Power MOSFET
ETR1121_003
■GENERAL DESCRIPTION
The XP152A12C0MR-G is a P-channel Power MOSFET with low o...
Description
XP152A12C0MR-G
Power MOSFET
ETR1121_003
■GENERAL DESCRIPTION
The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V
: Rds(on) = 0.5Ω@ Vgs = -2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -2.5V
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/ MARKING
21 2 x
G:Gate S:Source D:Drain
■PIN ASSIGNMENT
PRODUCTS
PACKAGE
ORDER UNIT
XP152A12C0MR
SOT-23
3,000/Reel
XP152A12C0MR-G...
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