XP152A12C0MR

XP152A12C0MR-G Power MOSFET ETR1121_003 ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING 21 2 x G：Gate S：Source D：Drain ■PIN ASSIGNMENT PRODUCTS PACKAGE ORDER UNIT XP152A12C0MR SOT-23 3,000/Reel XP152A12C0MR-G...