XP152A12COMR

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.3 Ω ( Vgs = -4.5V ) Rds (on) = 0.5 Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT - 23 Top View Equivalent Circuit 3 Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 + 12 -0.7 -2.8 -0.7 0.5 150 -55 to 150 UNITS V V A A A W O 1 P - Channel MOS FET ( 1 device built-in ) 2 Channel Temperature Storage Temperature C C O ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics PARAMETER...