XP161A0390PR

NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.09Ω (max) NUltra High-Speed Switching NSOT-89 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP161A0390PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.09Ω(Vgs=4.5V) : Rds(on)=0.13Ω(Vgs=2.5V) : Rds(on)=0.3Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOT-89 PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 11 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 ±8 3 9 3 2 150 -55~150 Ta=25 : UNITS V V A A A W : : Note: When implemented on a ceramic PCB 858 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25 : SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs=0V Vgs=±8V, Vds=0V Id=1mA, Vds=10V Id=1.5A, Vgs=4.5V Id=1.5A, Vgs=2.5V Id=1.5A, V...