XP161A1265PR

x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.055Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 Package s General Description The XP161A1265PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.055Ω(Vgs=4.5V) Rds(on)=0.095Ω(Vgs=2.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 2.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source SOT-89 (TOP VIEW) s Equivalent Circuit s Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 ±12 4 16 4 2 150 -55~150 Ta=25 : UNITS V V A A A W : : 1 2 3 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature N-Channel MOS FET (1 device built-in) Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-...