XP161A1355PR

NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.05Ω (max) NUltra High-Speed Switching NSOT-89 Package NGate Protect Diode Built-in GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP161A1355PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V ) : Rds (on) = 0.07Ω ( Vgs = 2.5V ) : Rds (on) = 0.15Ω ( Vgs = 1.5V ) Ultra high-speed switching Gate protect diode built-in Operational Voltage : 1.5V High density mounting : SOT-89 PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 11 PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 - 55 ~ 150 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS 20 8 4 16 4 2 Ta=25 C O UNITS V V A A A W C C O O ( note ) : When implemented on a ceramic PCB 846 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effec...