Power MOS FET
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 Ω (max) Ultra High-Speed Switching Gate Protect Di...
Description
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package
Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems
General Description
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.15 Ω ( Vgs = -10V ) Rds (on) = 0.28 Ω ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT - 89
Pin Configuration
Pin Assignment
PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source
u
1 G
2 D
3 S
SOT - 89 Top View
Equivalent Circuit
Absolute Maximum Ratings
Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W
O
1
2
P - Channel MOS FET ( 1 device built-in )
3
Channel Temperature Storage Temperature
C C
O
( note ) : When implemented on a ceramic PCB
Electrical Characteristics
DC characteristics
Ta=25 ° C ...
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