XP1B301

Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.65 0.65 q q Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 5 4 0.2 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –7 –100 –200 60 50 7 100 200 150 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C 1 : Base (Tr1) 2 : Base (Tr2) Emitter (Tr1) Marking Symbol: 4Q Internal Connection 1 2 3 4 Tr1 5 0 to 0.1 2SB709A+2SD601A 0.7±0.1 0.12 – 0.02 0.2±0.1 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Tr2 +0.05 0.2±0.05 For general amplification 1 Composite Transistors XP1B301 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IB = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VC...