XP1D873

Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For analog switching 0.65 s Features q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0 to 0.1 2SK1103 × 2 elements 0.7±0.1 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET. 2.0±0.1 1 2 3 5 0.65 4 0.2±0.1 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: OC Internal Connection 1 2 3 4 FET 1 5 FET 2 s Electrical Characteristics Parameter Drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain ON resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = –10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = –30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10...