XP1E554

Composite Transistors XP1E554 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.65 q q q 0.9± 0.1 q 2SC3757 × 2 elements 1 : Base (Tr1) 2 : Emitter (Tr1) Collector (Tr2) 0 to 0.1 s Basic Part Number of Element 0.7±0.1 0.12 – 0.02 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 3 : Base (Tr2) 4 : Emitter (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 5S Internal Connection 1 2 3 4 Tr1 6 Peak collector current Total power dissipation Overall Junction temperature Storage temperature Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit µA µA +0.05 Two elements incorporated into one package. (Tr1 emitter is connected to Tr...