Composite Transistors
XP4601
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2...
Composite
Transistors
XP4601
Silicon
NPN epitaxial planer
transistor (Tr1) Silicon
PNP epitaxial planer
transistor (Tr2)
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For general amplification
0.65
2.1±0.1
0.65
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
1 2 3
6 5 4
0.9±0.1
q
2SD601A+2SB709A
0.7±0.1
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 60 50 7 100 200 –60 –50 –7 –100 –200 150 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: 5C Internal Connection
1 2 3 Tr1 6 5 4
Tr2
0.12 –0.02
s Basic Part Number of Element
0.2
+0.05
1
Composite
Transistors
XP4601
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0...