Document
Composite Transistors
XP4654
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high speed switching
0.65
2.1±0.1
0.65
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
1 2 3
6 5 4
0.9±0.1
q
2SC3757+2SA1738
0.7±0.1
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 –15 –15 –4 –50 –100 150 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: ED Internal Connection
1 2 3 Tr1 6 5 4
Tr2
0.12 –0.02
s Basic Part Number of Element
0.2
+0.05
1
Composite Transistors
XP4654
(Ta=25˚C)
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg
*1
s Electrical Characteristics
q
Tr1
Parameter Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 320 0.25 1.0 V V MHz pF ns ns ns Unit µA µA
Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
q
Tr2
Parameter Symbol ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob ton toff tstg
*2
Conditions VCB = –8V, IE = 0 VEB = –3V, IC = 0 VCE = –1V, IC = –10mA VCE = –1V, IC = –1mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –5V, IE = 0, f = 1MHz
min
typ
max – 0.1 – 0.1
Unit µA µA
Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
*1 *2
50 30 – 0.1 800 1500 1 12 20 19
150
– 0.2
V MHz pF ns ns ns
Refer to the test circuit (page 459) Refer to the test circuit (page 460)
Common characteristics chart PT — Ta
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2
Composite Transistors
Characteristics charts of Tr1 Switching time measuring circuit ton, toff Test Circuit
0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb= –3V 50Ω VCC=3V
XP4654
tstg Test Circuit
0.1µF A 910Ω 90Ω 1kΩ Vout
Vin=10V 50Ω
0.1µF 500Ω 500Ω Vbb=2V
VCC=10V
Vin Vout
10% 90%
Vin Vout
10% 90%
0 Vin
10% 10% tstg (.