XP4654

Composite Transistors XP4654 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 0.65 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 6 5 4 0.9±0.1 q 2SC3757+2SA1738 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 –15 –15 –4 –50 –100 150 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: ED Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 –0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors XP4654 (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg *1 s Electrical Characteristics q Tr1 Parameter Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200...