XP5555

Composite Transistors XP5555 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SC4782 × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 25 20 5 200 300 150 150 –55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: EO Internal Connection 1 Tr1 6 5 4 ˚C ˚C 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time *1 (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg *1 Conditions VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 0.1 ...