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Composite Transistors
XP5A554
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high speed switching
2.1±0.1
0.65
q q q
For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0 to 0.1
2SC3757 × 2 elements
1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2)
0.7±0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: FO Internal Connection
1 2 3 Tr1 6 5 4
Peak collector current Total power dissipation Overall Junction temperature Storage temperature
Tr2
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
(Ta=25˚C)
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 90 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit µA µA
0.12 –0.02
+0.05
1
Composite Transistors
ton, toff Test Circuit
0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb= –3V 50Ω VCC=3V
XP5A554
tstg Test Circuit
0.1µF
PT — Ta
200
Vout 1kΩ
90Ω
Total power dissipation PT (mW)
Vin=10V 50Ω
910Ω 0.1µF 500Ω 500Ω Vbb=2V
A
180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
VCC=10V
Vin Vout
10% 90%
Vin Vout
10% 90%
0 Vin
10% 10% tstg (Wave form at A)
Vout
toff
ton
Ambient temperature Ta (˚C)
IC — VCE
120
100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
IC/IB=10 100
VBE(sat) — IC
IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)
100
30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C
30 10 3 1 0.3 0.1 0.03 0.01 Ta=–25˚C 25˚C 75˚C
Collector current IC (mA)
IB=3.0mA 2.5mA
80
2.0mA 1.5mA
60 1.0mA 40 0.5mA 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
hFE — IC
600 VCE=1V 600
fT — IE
6
Cob — VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25˚C
Forward current transfer ratio hFE
500
Transition frequency fT (MHz)
500
5
f=1MHz IE=0 Ta=25˚C
400
400
4
300
300
3
200
Ta=75˚C 25˚C –25˚C
200
2
100
100
1
0 0.1
0.3
1
3
10
30
100
0 –1
–3
–10
–30
–100 –300 –1000
0 1 3 10 30 100
Collector current IC
(mA)
Emitter current IE
(mA)
Collector to base voltage VCB (V)
2
.