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XP5A554 Dataheets PDF



Part Number XP5A554
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Datasheet XP5A554 DatasheetXP5A554 Datasheet (PDF)

Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 2.1±0.1 0.65 q q q For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SC3757 × 2 elements 1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2) 0.7±0.1 0.2±0.1 s Absolute Maximum Ratings Pa.

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Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 2.1±0.1 0.65 q q q For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SC3757 × 2 elements 1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2) 0.7±0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: FO Internal Connection 1 2 3 Tr1 6 5 4 Peak collector current Total power dissipation Overall Junction temperature Storage temperature Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 90 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit µA µA 0.12 –0.02 +0.05 1 Composite Transistors ton, toff Test Circuit 0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb= –3V 50Ω VCC=3V XP5A554 tstg Test Circuit 0.1µF PT — Ta 200 Vout 1kΩ 90Ω Total power dissipation PT (mW) Vin=10V 50Ω 910Ω 0.1µF 500Ω 500Ω Vbb=2V A 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 VCC=10V Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Wave form at A) Vout toff ton Ambient temperature Ta (˚C) IC — VCE 120 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 100 VBE(sat) — IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C 30 10 3 1 0.3 0.1 0.03 0.01 Ta=–25˚C 25˚C 75˚C Collector current IC (mA) IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE — IC 600 VCE=1V 600 fT — IE 6 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 500 5 f=1MHz IE=0 Ta=25˚C 400 400 4 300 300 3 200 Ta=75˚C 25˚C –25˚C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 –1 –3 –10 –30 –100 –300 –1000 0 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 .


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