Composite Transistors
XP6213
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switch...
Composite
Transistors
XP6213
Silicon
NPN epitaxial planer
transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switching/digital circuits
2.1±0.1
0.65
q
q
Two elements incorporated into one package. (
Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0 to 0.1
UN1213 × 2 elements
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
0.7±0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: 8W Internal Connection
1 2 3 Tr1 6 5 4
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
*1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V...